학술논문
Single-electron tunneling operation via a-few-donor quantum dots in SOI-FETs up to room temperature
Document Type
Conference
Author
Source
2016 IEEE Silicon Nanoelectronics Workshop (SNW) Silicon Nanoelectronics Workshop (SNW), 2016 IEEE. :30-31 Jun, 2016
Subject
Language
Abstract
Single-electron tunneling in donor-atom transistors has been reported mostly at low temperatures, due to the relatively low tunnel barrier. Higher tunnel barrier, necessary for room-temperature operation, can be expected by coupling closely-placed donors to form a quantum dot (QD). For that purpose, we fabricate a-few-donor QDs in narrow-channel SOI-FETs by a selective-doping technique. In these devices, we observe Coulomb diamonds up to high temperature (T>150 K), while current peaks prominently survive even up to room temperature. The interplay between barrier height and charging energy in promoting room-temperature operation is also discussed.