학술논문
Stability of gold bonding and Ti/Au ohmic contact metallization to n-SiC in high power devices
Document Type
Conference
Author
Source
2009 32nd International Spring Seminar on Electronics Technology Electronics Technology, 2009. ISSE 2009. 32nd International Spring Seminar on. :1-5 May, 2009
Subject
Language
ISSN
2161-2528
2161-2064
2161-2064
Abstract
The stability of SiC/Ti/Au ohmic contacts as well as the strength of Au wire connection onto n-SiC chips were investigated. The ohmic contact to n-SiC was formed by rapid thermal annealing of Ti film and Au metallization has been applied to form electrical connections using Au wire bonds. Long-term tests of the connections were performed in air at 400 °C. Evaluation of electrical parameters as well as stable morphology and structure of the metallization show good stability of the Au based electrical connections.