학술논문
A high-efficiency HBT MMIC power amplifier
Document Type
Conference
Author
Source
12th Annual Symposium on Gallium Arsenide Integrated Circuit (GaAs IC) Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 1990. Technical Digest 1990., 12th Annual. :357-360 1990
Subject
Language
Abstract
An AlGaAs/GaAs heterojunction bipolar transistor monolithic microwave IC (HBT MMIC) power amplifier is developed that demonstrates very high power-added efficiency, high gain, and broad bandwidth. It uses a cascode structure with four 200- mu m common-emitter HBT cells driving four common-base cells of the same size. This amplifier achieves over 14-dB gain from 6 to 10 GHz, with a peak power-added efficiency (PAE) of 47% at 7.5 GHz at an output power level of 31 dBm. This corresponds to a power density of over 3 W per millimeter of emitter length. Input and output matching networks, as well as biasing networks, are all contained within the chip, which measures 80*80 mils (2*2 mm).ETX