부산대학교 도서관

In a three-phase voltage inverter consist of semiconductor components such as insulated gate bipolar transistor (IGBT) that is sensitive and at any time can have a fault (short circuit or open circuit) that produces a system malfunction. This paper proposes a technique for the detection of faults in the voltage inverter (VSI), this technique can locate and determine the faulty semiconductors, one or more, it is based on the difference between the real voltage signal and its reference, that has a minimum inflection point that is the fault image, From the comparison signal we can read the necessary parameters (t1, t2), at the end we compare this signal with the threshold to know where is the fault with positive or negative alternation, we used Simpowersystem/Simulink, the obtained results show us the effectiveness of the technique to detect the faults of open circuit and short circuit in the three-phase voltage inverter.