부산대학교 도서관

$\mathrm{Ge}_{\mathrm{1}-\mathrm{x}}\mathrm{Sn}_{\mathrm{x}}$ and $\mathrm{Si}_{\mathrm{y}}\mathrm{Gei}_{1-\mathrm{x}-\mathrm{y}}\mathrm{Sn}_{\mathrm{x}}$ are being considered for novel device schemes as they have interesting electrical and optical material properties. We will show that the epitaxial material quality is higher if GeH 4 , instead of Ge 2 H 6 , is used as Ge-source gas. $\mathrm{Ge}_{\mathrm{1}-\mathrm{x}}\mathrm{Sn}_{\mathrm{x}}$ is an interesting source/drain (S/D) material in Ge p-type FETs because the achievable electrically active boron doping concentration is a factor 60 higher than the boron solubility limit in Ge. We present a selective, conformally boron doped $\mathrm{Ge}_{\mathrm{1}-\mathrm{x}}\mathrm{Sn}_{\mathrm{x}}$ source/drain fabrication scheme implemented on 10 nm wide fins and on Ge based Gate-All-Around devices. N-doped $\mathrm{Si}_{\mathrm{y}}\mathrm{Ge}_{1-\mathrm{x}-\mathrm{y}}\mathrm{Sn}_{\mathrm{x}}$ is being considered as S/D material for nGe channels as Si:P suffers from degraded material quality when epitaxially grown on Ge.