학술논문
First Integration of 10-V CMOS Logic Circuit, 20-V Gate Driver, and 600-V VDMOSFET on a 4H-SiC Single Chip
Document Type
Conference
Author
Source
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2022 IEEE 34th International Symposium on. :321-324 May, 2022
Subject
Language
ISSN
1946-0201
Abstract
In this work, we reported the integration of 10-V CMOS logic circuit, 20-V gate driver, and 600-V VDMOSFET on a 4H-SiC single chip for full SiC smart power ICs. This integration process features PMOSFET isolation (P-iso) from the high voltage substrate, local oxidation of SiC isolation between devices, dual gate oxide thickness, and P + poly-Si gate. It is demonstrated that the blocking capability of the P-iso structure can exceed 700 V and the switch of the VDMOSFET can be controlled by a 10-V signal through a 10-V to 20-V level shifter and a 20-V gate driver.