학술논문
Improved Ohmic Contact Model for Accurate Simulation of GaN-based HEMTs Using Ensemble Monte Carlo Methods
Document Type
Conference
Author
Source
2022 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK) Future of Electron Devices, Kansai (IMFEDK), 2022 IEEE International Meeting for. :1-2 Nov, 2022
Subject
Language
Abstract
Ensemble Monte Carlo simulation was performed to simulate the current gain cutoff frequency (f T ) of an AlN/GaN HEMT. It was found that the donor density in the source ohmic neutral region should be larger than 5×10 20 cm -3 to precisely calculate the drain current. The calculation results indicated that as high as 1.6 THz of f T was achieved with a gate length of 10 nm.