학술논문
In-situ reflectivity spectra measurements of GaN-Based VCSELs
Document Type
Conference
Author
Source
2022 28th International Semiconductor Laser Conference (ISLC) Semiconductor Laser Conference (ISLC), 2022 28th International. :1-2 Oct, 2022
Subject
Language
Abstract
We measured in-situ reflectivity intensity at a resonance wavelength as a function of a GaN cavity length on an AlINN/GaN DBR. The reflectivity intensity oscillation at the resonance wavelength was observed, suggesting that an accurate cavity length control is possible.