학술논문
A 1Tb 3b/Cell 8th-Generation 3D-NAND Flash Memory with 164MB/s Write Throughput and a 2.4Gb/s Interface
Document Type
Conference
Author
Kim, Moosung; Yun, Sung Won; Park, Jungjune; Park, Hyun Kook; Lee, Jungyu; Kim, Yeong Seon; Na, Daehoon; Choi, Sara; Song, Youngsun; Lee, Jonghoon; Yoon, Hyunjun; Lee, Kangbin; Jeong, Byunghoon; Kim, Sanglok; Park, Junhong; Lee, Cheon An; Lee, Jaeyun; Lee, Jisang; Chun, Jin Young; Jang, Joonsuc; Yang, Younghwi; Moon, Seung Hyun; Choi, Myunghoon; Kim, Wontae; Kim, Jungsoo; Yoon, Seokmin; Kwak, Pansuk; Lee, Myunghun; Song, Raehyun; Kim, Sunghoon; Yoon, Chiweon; Kang, Dongku; Lee, Jin-Yub; Song, Jaihyuk
Source
2022 IEEE International Solid-State Circuits Conference (ISSCC) Solid-State Circuits Conference (ISSCC), 2022 IEEE International. 65:136-137 Feb, 2022
Subject
Language
ISSN
2376-8606
Abstract
As data sizes increase exponentially, the demand for higher-density NAND with a smaller cell size and a higher interface speed has also increased [1]–[4]. However, the increased number of WL-stack layers results in a smaller sensing circuit size and a smaller WL-to-WL spacing, which increases the intrinsic transistor variation and the inter-cell interference. One way to achieve good density while maintaining system performance is to support more multiple-plane operations with a circuit under cell array architecture, which leads to an increased noise power. Moreover, to achieve a 2.4Gb/s the I/O circuits need to support the faster speed while achieving lower power consumption. This paper presents the offset cancelling sensing latch (OCSL) scheme, the quad-group interference-free read (Q-IFR) scheme, and the common-source line (CSL) noise-tracking scheme to resolve the aforementioned challenges. In terms of the high-speed I/O bandwidth, a receiver circuit and an internal reference voltage generator are also proposed to increase the I/O speed, reduce the standby power consumption, and reduce the settling time when the chip is enabled.