학술논문

Activation of 300-mm-Diameter-Phosphorus-Implanted Silicon Substrates by Wireless Carbon Heating Tubes
Document Type
Conference
Source
2021 28th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD) Active-Matrix Flatpanel Displays and Devices (AM-FPD), 2021 28th International Workshop on. :11-14 Jun, 2021
Subject
Communication, Networking and Broadcast Technologies
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Robotics and Control Systems
Heating systems
Microwave antennas
Conductivity
Numerical simulation
Silicon
Distance measurement
Electron tubes
Language
Abstract
To realize uniform heating characteristic of 2.45-GHz-microwave-induced-heating system with a 330-mm-diameter heating unit of carbon heating tubes (CHTs), we installed a propeller-type-rotational antenna with two 120-mm-long blades with tilted angles of 45 and −45° and a height of 105 mm in 330-mm-diameter cavity with a modified rotating velocity optimized by the numerical simulation. The CHT heating at 800°C for 170 s reduced the sheet resistivity ranging from 60 to 80 Q/sq for 1.0×10 15 cnr=phosphorus implanted 300-mm-diameter silicon substrates. The average activation ratio Pay was 0.77 and its mean square deviation PRMSD was 0.05. They were better than Pay of 0.73 and PRMSD of 0.06 in the case of the CHT heating with no antenna.