부산대학교 도서관

We benchmark possible device options for gate-all-around input/output devices which are process compatible with core logic gate-all-around (GAA) nanosheet devices. We consider a partial gate-all-around device (without metal filling between the sheets) as well as a device with a thin metal gate between the sheets, resulting in work-function mismatch between side- and inner-gates. The results are benchmarked against ideal GAA I/O devices to understand the performance impact for each case. The partial GAA device performs well under certain geometric conditions ($W_{\text{NS}} < 30\text{nm}$). However, the device with thin metal between the sheets shows excellent performance even for large WNS with large work-function deviation assumptions.