학술논문

Failure mode analysis of al2O2-parylene c bilayer encapsulation for implantable devices and application to penetrating neural arrays
Document Type
Conference
Source
2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS) Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS), 2015 Transducers - 2015 18th International Conference on. :1747-1750 Jun, 2015
Subject
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Power, Energy and Industry Applications
Robotics and Control Systems
Signal Processing and Analysis
Transportation
Encapsulation
Impedance
Electrodes
Surfaces
Performance evaluation
Aluminum oxide
Testing
Neural interface
encapsulation
parylene C
atomic layer deposition
aluminum oxide
impedance spectroscopy
Language
ISSN
2159-547X
2164-1641
Abstract
We assess the performance of a parylene C - aluminum oxide bilayer encapsulation strategy as it applies to implantable devices with non-planar topography. Electrochemical measurements of devices subject to in vitro accelerated lifetime testing are analyzed to evaluate benefits of bilayer encapsulation versus parylene C alone. Failure modes associated with device features and topographies are identified and solutions are presented that promote stability of device impedances.