학술논문

Verilog-A model for avalanche dynamics and quenching in Single-Photon Avalanche Diodes
Document Type
Conference
Source
2020 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD) Simulation of Semiconductor Processes and Devices (SISPAD), 2020 International Conference o. :145-148 Sep, 2020
Subject
Components, Circuits, Devices and Systems
Computing and Processing
Power, Energy and Industry Applications
Semiconductor device measurement
Power demand
Silicon
Semiconductor process modeling
Numerical models
Sensors
Transistors
Silicon SPAD
avalanche dynamics
quenching circuits
Verilog-A code
TCAD
Language
ISSN
1946-1577
Abstract
We present a Verilog-A model accounting for the temporal avalanche buildup and its statistics in Single-Photon Avalanche Diodes (SPADs). This physics-based approach is compared to TCAD mixed-mode analyzing predictions, as well as measurements. The buildup that can be in the order of hundreds picoseconds, affects the statistical pulse width distribution, which is experimentally verified. Furthermore, we address in detail the voltage swing across the device during avalanche and its quenching, studying its impact on power consumption. This model can help a chip designer to optimize circuits for quenching the SPAD photodiode.