부산대학교 도서관

Ultrathin compressively strained SiGe layers is one of the most promising materials for high mobility channels of p-type Metal Oxide Semiconductor Field Effect Transistors (pMOSFETs). Fabrication of such layers as well as formation of high-quality gate oxides on SiGe both involve SiGe thermal oxidation processes. These processes require well-controlled oxidation kinetics and oxide properties. This work discusses oxidation kinetics of SiGe in light of the characterization of the thermal oxide density by the Resonant Soft X-Ray Reflectivity (R-SoXR) technique.