학술논문

A 1-μW Radiation-Hard Front-End in a 0.18-μm CMOS Process for the MALTA2 Monolithic Sensor
Document Type
Periodical
Source
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 69(6):1299-1309 Jun, 2022
Subject
Nuclear Engineering
Bioengineering
Electrodes
Epitaxial layers
MOS devices
Implants
Substrates
Capacitance
Voltage
Front-end circuits
monolithic active pixel sensors (MAPSs)
pixel detectors
radiation hardness
Language
ISSN
0018-9499
1558-1578
Abstract
In this article, a low-power, radiation-hard front-end circuit for monolithic pixel sensors, designed to meet the requirements of low noise and low pixel-to-pixel variability, the key features to achieve high detection efficiencies, is presented. The sensor features a small collection electrode to achieve a small capacitance ( $\text {n}_{\text {eq}}/\text {cm}^{{2}}$ non-ionizing energy loss (NIEL) and 80 Mrad total ionizing dose (TID) required for this application. Tests up to ${3} \cdot {10}^{15}$ 1-MeV $\text {n}_{\text {eq}}/\text {cm}^{{2}}$ and 100 Mrad were performed on the MALTA2 sensor and front-end circuit, which still show good performance even after these levels of irradiation, promising for even more demanding applications such as the future experiments at the high-luminosity large hadron collider (HL-LHC).