학술논문

Ferroelectric Pb(Zr, Ti)O3 thin layers on SrTiO3/GaAs
Document Type
Conference
Source
26th International Conference on Indium Phosphide and Related Materials (IPRM) Indium Phosphide and Related Materials (IPRM), 26th International Conference on. :1-2 May, 2014
Subject
Components, Circuits, Devices and Systems
Photonics and Electrooptics
Gallium arsenide
Silicon
Electrodes
Molecular beam epitaxial growth
Semiconductor device measurement
Pulsed laser deposition
Language
ISSN
1092-8669
Abstract
Ferroelectric epitaxial Pb(Zr, Ti)O 3 (PZT) layers were grown by pulsed laser deposition on SrTiO 3 /GaAs templates fabricated by molecular beam epitaxy. The templates present an excellent structural quality and the SrTiO 3 /GaAs is abrupt at the atomic scale. The PZT layers contain a- and c- domains, as shown by X-Ray diffraction analyses. Piezoresponse force microscopy experiments and macroscopic electrical characterizations indicate that PZT is ferroelectric. A relative dielectric permittivity of 164 is extracted from these measurements.