학술논문

Comparison of amorphous InZnO and polycrystalline ZnO:Al conductive layers for CIGS solar cells
Document Type
Conference
Source
2009 34th IEEE Photovoltaic Specialists Conference (PVSC) Photovoltaic Specialists Conference (PVSC), 2009 34th IEEE. :001576-001581 Jun, 2009
Subject
Photonics and Electrooptics
Power, Energy and Industry Applications
Engineered Materials, Dielectrics and Plasmas
Components, Circuits, Devices and Systems
Amorphous materials
Photovoltaic cells
Substrates
Glass
Zinc oxide
Electric resistance
Optical films
Laboratories
Fabrication
Argon
Language
ISSN
0160-8371
Abstract
We investigated the optical and electrical properties of amorphous InZnO (IZO) as a potential replacement of Al-doped ZnO (AZO) conducting window layer for CuInGaSe 2 (CIGS) solar cells. The device performance of CIGS devices with IZO of different thickness and sheet resistance was compared with that of CIGS standard devices with AZO. The results show that the optical and electrical properties of IZO were affected by deposition conditions, especially by the oxygen concentration, and thickness. Initial results on the CIGS solar cells showed that devices with IZO yield cell efficiencies comparable to that of the devices with standard AZO, when the sheet resistance of IZO was close to that of AZO.