학술논문
High quality pseudomorphic InAs/InP quantum wells grown by molecular beam epitaxy
Document Type
Conference
Author
Source
[Proceedings 1991] Third International Conference Indium Phosphide and Related Materials Indium Phosphide and Related Materials, 1991., Third International Conference.. :492-495 1991
Subject
Language
Abstract
The growth of InAs/InP strained quantum well structures with well thicknesses of 5 to 70 AA by solid source molecular beam epitaxy (MBE) is discussed. Photoluminescence has been observed from these structures over the wavelength range 1.0 to approximately=2.1 mu m, at 10 K. Multiquantum-well p-i-n diodes are characterized for optoelectronic applications from 1.0 to 2.0 mu m. Preliminary studies of InAs-channel MODFET devices are presented.ETX