학술논문
Impact of Cell Layout on On-state and Dynamic Characteristics of N-channel SiC IGBTs
Document Type
Conference
Author
Source
2022 IEEE 34th International Symposium on Power Semiconductor Devices and ICs (ISPSD) Power Semiconductor Devices and ICs (ISPSD), 2022 IEEE 34th International Symposium on. :85-88 May, 2022
Subject
Language
ISSN
1946-0201
Abstract
The conductivity-modulation enhancement of n-channel SiC insulated-gate bipolar transistors (IGBTs) with different device cell layouts has been investigated. By utilizing the box cell layout, the specific differential on-resistance was reduced by 35 %, while the turn-off loss increased only slightly (up to 7 %). This implies that the box layout can effectively enhance the carrier concentration near the emitter region in the on-state. Also, SiC IGBTs fabricated with the box layout properly operated without latch-up phenomenon up to 300 A/cm 2 switching. SiC IGBTs can significantly reduce the on-voltage with only a small switching loss increase by utilizing the box layout.