학술논문
A 5 V Dynamic 16 K RAM with a New Memory Cell Needs Only 8 mm2
Document Type
Conference
Source
ESSCIRC 78: 4th European Solid State Circuits Conference - Digest of Technical Papers Solid State Circuits Conference - Digest of Technical Papers, 1978. ESSCIRC 78. 4th European. :99-102 Sep, 1978
Subject
Language
Abstract
A small 16 K RAM in double silicon technology using a novel dynamic memory cell has been realized and tested. using 3.5 ¿m design rules the complete memory is 8 mm 2 large. First samples achieved an access time of 160 ns with a power dissipation of 85 mW.