학술논문
Planar integration of a resonant-tunneling diode with pHEMT using a novel proton implantation technique
Document Type
Periodical
Author
Source
IEEE Electron Device Letters IEEE Electron Device Lett. Electron Device Letters, IEEE. 19(12):478-480 Dec, 1998
Subject
Language
ISSN
0741-3106
1558-0563
1558-0563
Abstract
A novel technique of integrating resonant-tunneling diodes (RTDs) with pseudomorphic high-electron-mobility transistors (pHEMTs) is demonstrated. A proton was implanted through the pHEMT layers to convert the RTD structure underneath to a high-resistivity buffer without degrading the performance of the pHEMT. The cutoff frequency is 16 GHz for a 1.5-μm-gate-length pHEMT on such an implanted buffer. Substituting the conventional deep mesa etch with ion implantation maintains a highly planar surface. Such a monolithically integrated RTD/pHEMT oscillator is described.