학술논문
Graphene-oxide-semiconductor planar-type electron emission device and its applications
Document Type
Conference
Author
Source
2018 31st International Vacuum Nanoelectronics Conference (IVNC) Vacuum Nanoelectronics Conference (IVNC), 2018 31st International. :1-2 Jul, 2018
Subject
Language
ISSN
2380-6311
Abstract
The planar type electron emission devices based on a graphene-oxide-semiconductor (GOS) structure were developed. The GOS type electron emission devices fabricated by the combination of low temperature graphene deposition process of 800 $^{\circ\mathrm{C}}$ and the post device annealing at 300 $^{\circ\mathrm{C}}$ in vacuum achieved both of very high electron emission efficiency more than 10 % and high electron emission densities of around 100 mA/cm$^{\mathbf{2}}$