학술논문

Effects of hydrogen dissociation in semi-insulating gallium nitride under UV irradiation on terahertz emission properties
Document Type
Conference
Source
2022 47th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz) Infrared, Millimeter and Terahertz Waves (IRMMW-THz),2022 47th International Conference on. :1-2 Aug, 2022
Subject
Aerospace
Bioengineering
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
Photonics and Electrooptics
Signal Processing and Analysis
Spectroscopy
Radiation effects
Hydrogen
Photoluminescence
Bending
Magnesium
Gallium nitride
Language
ISSN
2162-2035
Abstract
We report the terahertz (THz) emission spectroscopy (TES) and photoluminescence (PL) spectroscopy results for a semi-insulating (SI) GaN film in comparison with those for unintentionally-doped (UID) and magnesium (Mg)-doped ones. The THz emission polarity showed their band bending near the surface. In addition, the TES and PL results showed intensity changings over time for SI, UID-GaN, but not for Mg-doped GaN. The origin of these effects was studied by observing the THz emission property in the air and vacuum and attributed to the UV- induced hydrogen dissociation.