학술논문
Development and RF-Performance of AlGaN/GaN and InAlN/GaN HEMTs on Large-Diameter High-Resistivity Silicon Substrates
Document Type
Conference
Author
Source
2022 17th European Microwave Integrated Circuits Conference (EuMIC) Microwave Integrated Circuits Conference (EuMIC), 2022 17th European. :80-83 Sep, 2022
Subject
Language
Abstract
A CMOS-compatible industrial processing and RF analysis of 150 mm GaN-on-HR-Si substrates with AlGaN and InAlN barrier is presented. Process development along with transfer to large-wafer scale is shown and some HEMT calibration devices produced on AlGaN/GaN following the aforementioned procedure are characterized in terms of RF-performance by using a set of measured multi-bias $S$-parameters. An automatic small-signal equivalent circuit extraction strategy for these AlGaN/GaN DUTs is validated and some de-embedded figures of merit, namely $\mathrm{f}_{\mathbf{T}}\approx$ 20 GHz and $f_{\boldsymbol{\max}}\approx$ 41 GHz are drawn out for initial evaluation of the technology.