학술논문
Optimized Perovskite Photodetector via Room Temperature Nanostructured Stamp Imprinting
Document Type
Periodical
Source
IEEE Photonics Technology Letters IEEE Photon. Technol. Lett. Photonics Technology Letters, IEEE. 36(9):613-616 May, 2024
Subject
Language
ISSN
1041-1135
1941-0174
1941-0174
Abstract
Halide perovskite photodetectors have attracted numerous attentions due to their splendid optoelectronic properties. However, a simple and cost-effective strategy to simultaneously realize crystallization control and optical nanostructure integration is still missing. In this work, we have redesigned the traditional nanoimprint lithography (NIL) method, simultaneously realizing perovskite crystal optimization and optical nanostructure integration at room temperature and low pressure (RT imprinting). Different from the traditional high-temperature and high-pressure process, this strategy is more conducive to the application of perovskite optoelectronics on flexible substrates. Consequently, the perovskite photodetector shows a 1154.85% and 23.9% increase in detectivity and response speed after RT imprinting, respectively.