학술논문

A Low Power Wideband Receiver Front End for C/X Band 5G Applications in 90 nm CMOS Technology
Document Type
Conference
Source
2023 Asia-Pacific Microwave Conference (APMC) Microwave Conference (APMC), 2023 Asia-Pacific. :685-687 Dec, 2023
Subject
Aerospace
Bioengineering
Components, Circuits, Devices and Systems
Fields, Waves and Electromagnetics
Power demand
5G mobile communication
Receivers
CMOS technology
Wideband
Mixers
Wireless fidelity
CMOS low noise amplifier
Passive Mixer
Transimpedance amplifier
Transformer input matching.
Language
Abstract
This paper presents a fully integrated receiver (Rx) front end designed for the coexistence of a $5 \mathrm{GHz} 802.11 \mathrm{ac}$ WiFi system and emerging 5G wireless communications. The Rx front end consists of a low noise amplifier (LNA), Balun, passive mixer, and low-pass trans-impedance amplifier (TIA) for baseband channel selection. The LNA is implemented using an inverter-type LNA with transformer feedback to achieve high integration, wideband operation, and higher transconductance $\left(g_{m}\right)$ compared to a common source (CS) amplifier. The key objective is to optimize performance in terms of high conversion gain, low noise figure (NF), and low power consumption. The fabricated Rx front end, utilizing $\operatorname{tsmc}^{\mathrm{TM}} 90-\mathrm{nm}$ CMOS technology, demonstrates a conversion gain of $32 \mathrm{~dB}$, an NF of $2.47 \mathrm{~dB}$, and a 35MHz channel bandwidth, all while consuming only $24 \mathrm{~mW}$ of power. The chip occupies an area of $0.63 \mathrm{~mm}^{2}$.