학술논문
A 140 dB Single-Exposure Dynamic-Range CMOS Image Sensor with In-Pixel DRAM Capacitor
Document Type
Conference
Author
Oh, Youngsun; Lim, Jungwook; Park, Soeun; Yoo, Dongsuk; Lim, Moosup; Park, Joongseok; Kim, Seojoo; Jung, Minwook; Kim, Sungkwan; Lee, Junetaeg; Baek, In-Gyu; Ryu, Kwangyul; Kim, Kyungmin; Jang, Youngtae; Keel, Min-Sun; Bae, Gyujin; Yoo, Seunghun; Jeong, Youngkyun; Kim, Bumsuk; Ahn, Jungchak; Lee, Haechang; Yim, Joonseo
Source
2022 International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2022 International. :37.7.1-37.7.4 Dec, 2022
Subject
Language
ISSN
2156-017X
Abstract
This paper presents a CMOS image sensor with a $2.1\ \mu \mathrm{m}$ pixel for automotive applications. By using a sub-pixel structure and a high-capacity DRAM capacitor per pixel, a single exposure dynamic range achieves 140 dB at $85 ^{\circ}\mathrm{C}$, supporting LED flicker mitigation. Dual conversion gain circuits of a small photodiode enable SNR to stay above 23 dB at $105 ^{\circ}\mathrm{C}$ even with the very high capacitance. The full-depth deep trench isolation prevents electrical crosstalk between pixels even in extremely high illuminance conditions and achieves high conversion gain for low random noise of 0.83 e-.