학술논문
Development and Product Reliability Characterization of Advanced High Speed 14nm DDR5 DRAM with On-die ECC
Document Type
Conference
Source
2023 IEEE International Reliability Physics Symposium (IRPS) Reliability Physics Symposium (IRPS), 2023 IEEE International. :1-4 Mar, 2023
Subject
Language
ISSN
1938-1891
Abstract
The reliability characterization of fabricated 14nm DDR5 DRAMs with On-die Error Correction Code (ECC) and EUV process is presented for the first time. Intrinsic reliability of FEOL and BEOL WLR showed well above 10yrs of lifetime, 125°C. The products demonstrated no fails in high temperature operating lifetime (HTOL) of 1000hrs. The On-Die ECC design improved the single bit error rate by $\boldsymbol{10^{-6}}$ times (refresh time $\boldsymbol{ > 4\mathrm{x}}$). The failure rate, ppm of manufacturing burn-in process confirmed the healthiness of the baseline material and also effectively screen out and monitor any random defects. The presented 14nm DDR5 DRAMs are well in production for the PC segments and have been shipping and qualified for the Server segments.