학술논문
Highly Reliable Cell Characteristics with CSOB(Channel-hole Sidewall ONO Butting) Scheme for 7th Generation 3D-NAND
Document Type
Conference
Author
Source
2021 IEEE International Electron Devices Meeting (IEDM) Electron Devices Meeting (IEDM), 2021 IEEE International. :10.1.1-10.1.4 Dec, 2021
Subject
Language
ISSN
2156-017X
Abstract
Architecture change from BCS (Body Contact Spacer) scheme to CSOB (Channel-hole Sidewall ONO Butting) scheme for the 7th-generation 3D-NAND flash memory is discussed, which has been driven to adopt COP (Cell Over Peripheral circuits) scheme. Device considerations, such as cell-to-cell interference, cell current, and charge loss in the 7th-generation 3D-NAND are reviewed and solutions are suggested that lead to the world smallest unit cell volume in flash memory.