학술논문

Spatial Dependence of Single Event Transients in Wide Bandgap Materials Photodiodes Probed by Pulsed Laser, Pulsed X-Rays and Heavy Ions Microbeam
Document Type
Conference
Source
2022 22nd European Conference on Radiation and Its Effects on Components and Systems (RADECS) Radiation and Its Effects on Components and Systems (RADECS), 2022 22nd European Conference on. :1-7 Oct, 2022
Subject
Aerospace
Components, Circuits, Devices and Systems
Nuclear Engineering
Photonics and Electrooptics
Robotics and Control Systems
Signal Processing and Analysis
Single event transients
Photonic band gap
Silicon carbide
X-rays
Ions
Photodiodes
Laser pulses
Carriers transport
gallium nitride
pulsed lasers
silicon carbide
single event effects
Language
ISSN
1609-0438
Abstract
In this work, we report on the investigation of the spatial dependence of single event transients observed in wide bandgap semiconductor based components (gallium nitride and silicon carbide), generated by femtosecond pulsed laser, pulsed X-rays and heavy ions microbeam. We evidence a strong spatial dependence of the amount of collected charges as a function of the distance to contacts. Similar variations are observed among all three tests means.