학술논문
Multiphoton Absorption in Gallium Nitride and Silicon Carbide Photodiodes: Applications for Single-Event Effects Tests
Document Type
Periodical
Author
Source
IEEE Transactions on Nuclear Science IEEE Trans. Nucl. Sci. Nuclear Science, IEEE Transactions on. 70(7):1451-1458 Jul, 2023
Subject
Language
ISSN
0018-9499
1558-1578
1558-1578
Abstract
We report on the investigation of multiphoton absorption processes in gallium nitride (GaN) and silicon carbide (SiC) photodiodes. Up to three-photon absorption mechanisms were evidenced on both materials because of a wavelength-tunable femtosecond laser chain. These results are applied to single-event effect (SEE) investigations on a commercial GaN high-electron mobility transistor (HEMT). We could trigger single-event transients (SETs) by focusing the beam throughout the silicon substrate and collect charge that was photogenerated in the GaN layer by a three-photon absorption process.