학술논문
TID response of PD-SOI FinFET with high-k isolation
Document Type
Conference
Author
Source
2022 IEEE 19th India Council International Conference (INDICON) India Council International Conference (INDICON), 2022 IEEE 19th. :1-4 Nov, 2022
Subject
Language
ISSN
2325-9418
Abstract
Total ionizing dose response of PD-SOI FinFET is studied for HfO 2 and SiO 2 isolation dielectric layer for dose rates of 100 to 500 krad. Comparison of I DS -V GS curve for low-k and high-k isolation dielectric and its TID response is also done in this article. The current ratio and fixed charges variation is also studied. The PD-SOI FinFET with SiO 2 isolation dielectric is observed to be highly sensitive to radiation. The device with high-k isolation dielectric shows better performance after TID. The degradation is minimum for high dose rates. Hence, it can be used for further application in space environment.