부산대학교 도서관

Resistive random access memories (ReRAM), also referred to as memristors, have gained a great deal of attention recently as a potential high density, low energy replacement for flash and DRAM. Furthermore, the analog properties of this device are a potential enabler of neuromorphic computing. Of particular interest are the class of ReRAM based on based on the valence change mechanism and fabricated from transition metal oxides (TMOs) such as TaO x and HfO x [1]. This particular class of ReRAM have achieved record endurance (10 12 cycles) [2], sub-nanosecond switching speeds [3], and demonstrated operation in 10×10 nm devices [4]. For the first time, we present resistive switching in a ReRAM structure with an AlN based switching layer. The electrical characteristics are very similar to those observed in the valence change class of ReRAM. In particular, we have observed bipolar switching at less than ±1V and repeatable linear current-voltage (I–V) behavior at subswitching (read) voltages similar to the electrical characteristics of TaO x ReRAM. Physical analysis using TEM with electron energy loss spectroscopy (EELS) reveals that the switching layer contains oxygen, likely forming aluminum oxynitride (AlON).