학술논문

Controlling Silicon Bottom Cell Lifetime Variance in II-VI/Si Tandems
Document Type
Conference
Source
2019 IEEE 46th Photovoltaic Specialists Conference (PVSC) Photovoltaic Specialists Conference (PVSC), 2019 IEEE 46th. :2188-2191 Jun, 2019
Subject
Components, Circuits, Devices and Systems
Power, Energy and Industry Applications
II-VI
cadmium telluride
IZO
minority-carrier lifetime
multijunction
tandem
Language
Abstract
An intricate look is taken at the methods used to account for variance in minority-carrier lifetime in the silicon bottom cell of II-VI/Si tandem solar cells. A discussion on the modeling is provided. Lateral wafer variance is determined to be much less than wafer-to-wafer variance. Size testing indicates a minimum size of 4 × 4 cm is necessary for accurate results. The cleaning procedure and photoluminescence testing is described. Despite a small sample size, Si samples with CdTe deposition and CdCl2 treatment maintain over 1 ms lifetimes, enabling the Si bottom cell in II-VI/Si tandem cells to reach state-of-the-art performance.