학술논문

Bifacial interdigitated-back-contact (IBC) crystalline silicon solar cell: fabrication and evaluation by internal quantum efficiency mapping
Document Type
Conference
Source
2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) Photovoltaic Energy Conversion (WCPEC), 2018 IEEE 7th World Conference on. :3738-3742 Jun, 2018
Subject
Aerospace
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Power, Energy and Industry Applications
Electrodes
Fingers
Photovoltaic cells
Silicon
Passivation
Reflectivity
Area measurement
crystalline silicon
back contact
bifacial
internal quantum efficiency
Language
Abstract
We present a bifacial interdigitated-back-contact (IBC) silicon solar cell with high bifaciality. Screen-printing and firing technology were used to form electrodes. Al-Ag paste and Ag paste were used for the p- and n-electrodes. The cell efficiencies were 20.5 % (cell area: $10.2\,\mathrm{cm}^{\mathrm {2}}$) and 19.8 % (cell area: $156.25\,\mathrm{cm}^{{2}}$). From the cell analysis by internal quantum efficiency mapping, it was found that the short-circuit current decreased above the screen printed electrodes and back surface field region. To increase the bifacial factor, it is necessary to improve the passivation properties at the BSF region and optimize the electrode design.