학술논문
Fully logic compatible (1.6V Vcc, 2 additional FRAM masks) highly reliable sub 10F2 embedded FRAM with advanced direct via technology and robust 100 nm thick MOCVD PZT technology
Document Type
Conference
Author
Source
IEDM Technical Digest. IEEE International Electron Devices Meeting, 2004. Electron devices meeting Electron Devices Meeting, 2004. IEDM Technical Digest. IEEE International. :591-594 2004
Subject
Language
Abstract
We newly developed a highly reliable 100 nm thick MOCVD PZT technology and a novel direct cell via technology applicable to fully logic compatible sub 10F/sup 2/ cell embedded FRAM. A 2Pr value of 40 uC/cm/sup 2/ at 1.6V was obtained on our one-mask etched new PTO seeded 100 nm thick MOCVD PZT capacitor. Capacitor degradation that could occur upon a direct application of metal on capacitor through direct via was completely prevented by combining a novel TiN-plug scheme and a diffusion barrier metal technology, which greatly improves the interface properties between top electrode and PZT. Finally, a highly reliable, 1.6V operational, sub 10F/sup 2/ cell FRAM has been successfully embedded into experimental 0.18 /spl mu/m logic with only two additional FRAM masks by successfully implementing the above two key technologies.