학술논문

Effective methods for improving device performances of P-I-N perovskite solar cells
Document Type
Conference
Source
2017 Opto-Electronics and Communications Conference (OECC) and Photonics Global Conference (PGC) Opto-Electronics and Communications Conference (OECC) and Photonics Global Conference (PGC), 2017. :1-5 Jul, 2017
Subject
Bioengineering
Communication, Networking and Broadcast Technologies
Engineered Materials, Dielectrics and Plasmas
Engineering Profession
Photonics and Electrooptics
Photovoltaic cells
Annealing
Performance evaluation
Fabrication
Morphology
Scanning electron microscopy
Substrates
perovskite
film morphology
crystallinity
thermal annealing
Efficiency
Language
ISSN
2166-8892
Abstract
In this presentation, we report a simple and effective method for improving the performance of CH 3 NH 3 PbI 3 perovskite solar cells. By employing a novel hot-air annealing process (HAAP) and a merged annealing method (MA) for preparing the perovskite CH 3 NH 3 PbI 3 film, we could successfully enhance the crystallinity of the CH 3 NH 3 PbI 3 active layer and improve its photon collection properties. This led to a marked improvement in device performance. Solar cells with the structure indium tin oxide/poly(3,4-ethylenedioxythiophene)-poly(styrenesulfonate)/CH3NH3PbI3 active layer/[6,6]-phenyl-C61-butyric acid methyl ester/Ca/Al and fabricated using these methods showed significantly improved performance, including higher PCE and fill factor values than those of the device fabricated conventionally. The PCE increased from 9.05 to 15.55 % when the HAAP process was used and to 18.55 % when the MA was used. Moreover, the devices did not exhibit photocurrent hysteresis, which is always observed in the case of the conventionally fabricated solar cells owing to the charge traps resulting from the low quality of the perovskite film.