학술논문

Radiation Tolerance of High-Resistivity LBNL CCDs
Document Type
Conference
Source
2006 IEEE Nuclear Science Symposium Conference Record Nuclear Science Symposium Conference Record, 2006. IEEE. 1:152-157 Oct, 2006
Subject
Nuclear Engineering
Power, Energy and Industry Applications
Fields, Waves and Electromagnetics
Engineered Materials, Dielectrics and Plasmas
Telescopes
Charge coupled devices
Cyclotrons
Charge transfer
Silicon
Laboratories
Protons
Degradation
Dark current
Instruments
Astrophysics and Space Instrumentation
Radiation Damage Effects
Language
ISSN
1082-3654
Abstract
Thick, fully-depleted p-channel charge-coupled devices (CCDs) have been developed at the Lawrence Berkeley National Laboratory (LBNL). These CCDs have several advantages over conventional n-channel CCDs, including enhanced quantum efficiency and reduced fringing at near-infrared wavelengths, a small point spread function, and improved radiation tolerance. Here we report results from the irradiation of CCDs with 12.5 and 55 MeV protons at the LBNL 88-Inch Cyclotron. These studies indicate that the CCDs still perform well after irradiation, even in the parameters in which significant degradation is expected: charge transfer efficiency, dark current, and isolated hot pixels. As expected, the radiation tolerance of the LBNL CCDs is significantly improved over conventional n-channel CCDs currently employed in space-based telescopes such as the Hubble Space Telescope (HST).