학술논문

Substrate Embedded Power Electronics Packaging for Silicon Carbide mosfets
Document Type
Periodical
Source
IEEE Transactions on Power Electronics IEEE Trans. Power Electron. Power Electronics, IEEE Transactions on. 39(8):9614-9628 Aug, 2024
Subject
Power, Energy and Industry Applications
Aerospace
Communication, Networking and Broadcast Technologies
Components, Circuits, Devices and Systems
Computing and Processing
Engineered Materials, Dielectrics and Plasmas
Fields, Waves and Electromagnetics
General Topics for Engineers
Nuclear Engineering
Signal Processing and Analysis
Transportation
Inductance
Standards
Logic gates
Copper
Substrates
Silicon carbide
Etching
Advanced packaging of power electronics
embedded die
integrated power electronics
standard cell
Language
ISSN
0885-8993
1941-0107
Abstract
This article proposes a new power electronic packaging for discrete dies, namely, a standard cell, which consists of a step-etched active metal brazing (AMB) substrate and a flexible printed circuit board (flex-PCB). The standard cell exhibits high thermal conductivity, complete electrical insulation, and low stray inductance, thereby enhancing the performance of SiC mosfet devices. The standard cell has a stray power loop inductance of less than $\text{1}\,\text{nH}$ and a gate loop inductance of less than $\text{1.5}\,\text{nH}$. The standard cell has a flat body with surface-mounting electrical connections on one side and direct thermal connections on the other. The use of flex-PCB die interconnection enables maximum utilization of source pads while providing a flexible gate-source connection and the converter PCB. This article presents the design concept of the standard cell and experimentally validates its effectiveness in a converter system.