학술논문
Substrate Embedded Power Electronics Packaging for Silicon Carbide mosfets
Document Type
Periodical
Author
Source
IEEE Transactions on Power Electronics IEEE Trans. Power Electron. Power Electronics, IEEE Transactions on. 39(8):9614-9628 Aug, 2024
Subject
Language
ISSN
0885-8993
1941-0107
1941-0107
Abstract
This article proposes a new power electronic packaging for discrete dies, namely, a standard cell, which consists of a step-etched active metal brazing (AMB) substrate and a flexible printed circuit board (flex-PCB). The standard cell exhibits high thermal conductivity, complete electrical insulation, and low stray inductance, thereby enhancing the performance of SiC mosfet devices. The standard cell has a stray power loop inductance of less than $\text{1}\,\text{nH}$ and a gate loop inductance of less than $\text{1.5}\,\text{nH}$. The standard cell has a flat body with surface-mounting electrical connections on one side and direct thermal connections on the other. The use of flex-PCB die interconnection enables maximum utilization of source pads while providing a flexible gate-source connection and the converter PCB. This article presents the design concept of the standard cell and experimentally validates its effectiveness in a converter system.