학술논문
Analysis and Assessment of temperature effect on an Open Loop Active Gate Voltage Control of GaN Transistor during Turn-ON and Turn-OFF
Document Type
Conference
Author
Source
2019 IEEE 13th International Conference on Power Electronics and Drive Systems (PEDS) Power Electronics and Drive Systems (PEDS), 2019 IEEE 13th International Conference on. :1-5 Jul, 2019
Subject
Language
ISSN
2164-5264
Abstract
This paper assesses the effect of the temperature on an open loop control of Active Gate Voltage Control (AGVC) during turn-on and turn-off of GaN HEMTs in order to reduce current or voltage switching speed. For the turn-on, two parameters (V int , T int ) are used to reduce the current transient speed while for the turn-off three parameters (T 0 , V int0 , T int0 ) are used to adjust the voltage transient speed. Initially, the temperature effect of the parameters is assessed using the static characteristics of GaN-HEMT and then experimentally verified. The results demonstrate the degradation of the AGVC operation with the increase in temperature. This degradation is due to a variation of the transistor threshold voltage and a decrease in current capability with temperature. The temperature affects the turn-on more than the turn-off.