학술논문
Breakdown of a simple scaling rule of SOI MOSFETs and its prolong by thinning BOX
Document Type
Conference
Author
Source
International Semiconductor Device Research Symposium, 2003 Semiconductor device research Semiconductor Device Research Symposium, 2003 International. :260-261 2003
Subject
Language
Abstract
In this paper, we analyse the causes of DIBL (Drain-Induced Barrier Lowering) at SOI/BOX interface by the device simulation. Simple scaling rule of SOI MOSFETs breaks down in ultra thin SOI MOSFETs with deep sub-micron gates, and that thinning of BOX layer as well as SOI layer is effective to the scaling rule. The electrical properties of SOI MOSFETs with BOX (Buried Oxide) layer of 10 nm and 1000 nm was characterized by contour mapping and potential profiles at interface leakage region.