학술논문
Analysis of SiC Schottky diodes after thermal vacuum test by means of lock-in infrared thermography
Document Type
Conference
Author
Source
2020 21st International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE), 2020 21st International Conference on. :1-6 Jul, 2020
Subject
Language
Abstract
In this work, SiC Schottky diodes specifically developed for the BepiColombo space mission are studied by Lock-in Infrared Thermography (LIT) to analyse local defects observed in their top metallization and passivation layers appeared after thermal vacuum tests. Such defects might potentially be the root cause of the increase in reverse leakage current measured after such accelerated tests.