학술논문

X-ray spectroscopic analysis of the growth of CBD-CdS buffers on flexible Cu(In,Ga)Se2 thin-film solar cell structures
Document Type
Conference
Source
2012 38th IEEE Photovoltaic Specialists Conference Photovoltaic Specialists Conference (PVSC), 2012 38th IEEE. :001682-001687 Jun, 2012
Subject
Photonics and Electrooptics
Power, Energy and Industry Applications
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Attenuation
Substrates
Surface treatment
Chemicals
Contamination
Photovoltaic cells
Spectroscopy
chalcopyrite thin-film solar cells
CdS buffer
x-ray spectroscopy
interfaces
Language
ISSN
0160-8371
Abstract
The chemical bath deposition (CBD) of CdS layers on Cu(In,Ga)Se 2 (“CIGSe”) absorbers on flexible polyimide substrates is examined using a combination of soft x-ray emission (XES) and photoelectron (XPS) spectroscopies. For this purpose, absorbers with with varying degrees of Cu-deficiency and NaF precursor thickness were studied. From the data, a detailed picture of the chemical surface composition (in particular the carbon and oxygen contamination) of the CBD-CdS layers can be drawn. The thickness and deposition rates were determined by monitoring the CdS-induced attenuation of the In 3d 5/2 XPS and In M 4,5 XES signals of the absorber, finding no significant impact of Na and/or Cu content of the CIGSe.