학술논문
Lateral conduction mid-Infrared photodetectors using self-assembled Ge/Si quantum dots
Document Type
Conference
Author
Source
2006 IEEE Nanotechnology Materials and Devices Conference Nanotechnology Materials and Devices Conference, 2006. NMDC 2006. IEEE. 1:520-521 Oct, 2006
Subject
Language
Abstract
We have investigated a lateral conduction midinfrared photodetectors by using photoionization of holes in the self-assembled Ge/Si quantum dots. A broad mid-infrared photocurrent spectrum was observed in photon energy range of 120–400 meV due to intersubband transition in the valence band of self-assembled Ge quantum dots. The peak responsivity was 134 mA/W at photon energy range of 240 meV at T=10 K.