학술논문
13.1 A 1Tb 4b/cell NAND Flash Memory with tPROG=2ms, tR=110µs and 1.2Gb/s High-Speed IO Rate
Document Type
Conference
Author
Kim, Doo-Hyun; Kim, Hyunggon; Yun, Sungwon; Song, Youngsun; Kim, Jisu; Joe, Sung-Min; Kang, Kyung-Hwa; Jang, Joonsuc; Yoon, Hyun-Jun; Lee, Kanabin; Kim, Minseok; Kwon, Joonsoo; Jo, Jonghoo; Park, Sehwan; Park, Jiyoon; Cho, Jisoo; Park, Sohyun; Kim, Garam; Bang, Jinbae; Kim, Heejin; Park, Jongeun; Lee, Deokwoo; Lee, Seonyong; Jang, Hwajun; Lee, Han-Jun; Shin, Donghyun; Park, Jungmin; Kim, Jungkwan; Kim, Jongmin; Jang, Kichang; Park, II Han; Moon, Seuna Hyun; Choi, Myung-Hoon; Kwak, Pansuk; Park, Joo-Yona; Choi, Youngdon; Kim, Sang-Lok; Lee, Seungjae; Kang, Dongku; Lim, Jeong-Don; Byeon, Dae-Seok; Song, Kiwhan; Choi, Junghwan; Hwang, Sang Joon; Jeong, Jaeheon
Source
2020 IEEE International Solid-State Circuits Conference - (ISSCC) Solid-State Circuits Conference - (ISSCC), 2020 IEEE International. :218-220 Feb, 2020
Subject
Language
ISSN
2376-8606
Abstract
3D NAND flash memory has enhanced its areal density by more than 50% per year by virtue of the aggressive development of 3D WL stacking technology for the recent three consecutive years [1]–[3]. Also storage market still requires more bits for diverse digital applications. [4]