학술논문
Low threshold operation of MOCVD grown 1.3 /spl mu/m range GaInNAs triple quantum-well lasers with low N content GaNAs barrier layers
Document Type
Conference
Author
Source
16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004. Indium Phosphide and Related Materials Indium Phosphide and Related Materials, 2004. 16th IPRM. 2004 International Conference on. :52-55 2004
Subject
Language
ISSN
1092-8669
Abstract
GaInNAs TQW lasers with different barrier materials grown by MOCVD were fabricated to evaluate their characteristics. It was confirmed that the J/sub th/ of the lasers with N containing barriers was lower than that of lasers with no N containing barriers. The lowest J/sub th/ have been realized with GaAsN (N:0.27 and 0.8%) barriers in GaInNAs lasers. The very low J/sub th/ of 120 A/cm/sup 2//well for 1.27 /spl mu/m laser grown with optimized growth condition have been realized with low N containing GaNAs barriers.