학술논문
Lg = 60 nm In0.53 Ga0.47 As MBCFETs: From gm_max = 13.7 mS/üm and Q = 180 to virtual-source modeling
Document Type
Conference
Author
Yoo, J.-H.; Jo, H.-B.; Lee, I.-G.; Choi, S.-M.; Baek, J.-M.; Lee, S T.; Jang, H.; Kong, M W.; Kim, H H.; Lee, H J.; Kim, H.-J.; Jeong, H.-S.; Park, W.-S.; Ko, D H.; Shin, S. H.; Kwon, H.-M.; Kim, S K.; Kim, J G.; Yun, J.; Kim, T.; Shin, K.-Y.; Kim, T.-W.; Shin, J.-K.; Lee, J.-H.; Shin, C.-S.; Seo, K.-S.; Kim, D.-H.
Source
2023 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits) VLSI Technology and Circuits (VLSI Technology and Circuits), 2023 IEEE Symposium on. :1-2 Jun, 2023
Subject
Language
ISSN
2158-9682
Abstract
In this paper, we report scalable 5 -level stacked gate-all-around (GAA) In 0.53 Ga0.47As multi-bridge channel FETs (MBCFETs), with careful attention paid to fluorine migration. At its heart, we maintained temperature of all the unit process steps below 300 °C and inserted an n-InP ledge into a top ${In}_{0.52}\mathrm{Al}_{0.48}\mathrm{As}$ sacrificial layer to suppress $\mathrm{F}^{-}$-induced donor passivation. In addition, we used a selectively regrown $n+{In}_{0.53}\mathrm{Ga}_{0.47}$ As contact formation by MOCVD and precision dry etching. The dry etching process resulted in a highly vertical etching slope along both the $\mathrm{S}/\mathrm{D}$ and W g directions. The fabricated $L_{g}=60\mathrm{~nm}$ MBCFET showed a record combination of $S=76\mathrm{mV}/\mathrm{dec},g_{m_{-}\max}=13.7 \mathrm{mS}/\mu\mathrm{m},I_{ON}=2.24\mathrm{~mA}/\mu\mathrm{m}$ and $Q=180$ at $V_{DS}=0.5\mathrm{~V}$.