학술논문
Lateral Scale Down of InGaAs/InAs Composite-Channel HEMTs With Tungsten-Based Tiered Ohmic Structure for 2-S/mm $g_{m}$ and 500-GHz $f_{T}$
Document Type
Periodical
Source
IEEE Transactions on Electron Devices IEEE Trans. Electron Devices Electron Devices, IEEE Transactions on. 54(3):378-384 Mar, 2007
Subject
Language
ISSN
0018-9383
1557-9646
1557-9646
Abstract
A laterally scaled-down ohmic structure and an InGaAs/InAs composite channel improve the dc and RF characteristics of InP-based HEMTs. We reduced the distance between the gate and ohmic metal to less than 100 nm and to form sub-100-nm-long gate simultaneously, and also introduced device passivation for future construction of subterahertz-band integrated circuits. A 50-nm-gate HEMT exhibiting extrinsic transconductance of 2.0 S/mm and extrinsic current gain cutoff frequency $(f_{T})$ of 496 GHz was successfully fabricated with this technology. This is the first report of a transistor with both 500-GHz-class $f_{T}$ and large current drivability.