학술논문

Electrical characterization of reduced graphene oxide deposited on interdigitated electrodes
Document Type
Conference
Source
2016 IEEE International Conference on Semiconductor Electronics (ICSE) Semiconductor Electronics (ICSE), 2016 IEEE International Conference on. :332-335 Aug, 2016
Subject
Bioengineering
Components, Circuits, Devices and Systems
Engineered Materials, Dielectrics and Plasmas
Photonics and Electrooptics
Graphene
Fabrication
Electrodes
Dielectrophoresis
Substrates
Conductivity
Photonic band gap
Reduced graphene oxide (rGO)
Interdigitated
dielectrophoresis (DEP)
Electrical property
Language
Abstract
Nowadays, reduced graphene oxide (rGO) has been used in many applications because the surface defect density can be controlled compared to pristine graphene. It has a band gap which make it easier to integrate with existing technologies. Though, a simple process and large scale device fabrication is needed to align the rGO during fabrication of device. In this work, dielectrophoresis (DEP) technique has been used to align the rGO on a substrate with interdigitated electrodes. First, the rGO was drop-casted on sample with interdigitated electrodes. Followed by DEP process to align the deposited rGO. Electrical measurement has been done. It shows that the conductivity and current increases with the increased number of drops for rGO solution. SEM image shows a distribution pattern which forms percolation network pathway of rGO. Raman spectroscopy confirmed the presence of rGO in between the channel of electrodes. This simple technique has the potential to be used for future large scale device fabrication.