학술논문
Reliability of passivated 0.15 /spl mu/m InAlAs-InGaAs HEMTs with pseudomorphic channel
Document Type
Conference
Author
Source
1999 IEEE International Reliability Physics Symposium Proceedings. 37th Annual (Cat. No.99CH36296) Reliability physics Reliability Physics Symposium Proceedings, 1999. 37th Annual. 1999 IEEE International. :99-102 1999
Subject
Language
Abstract
Accelerated life tests of 0.15 /spl mu/m gate length InAlAs-InGaAs HEMTs were performed under DC electrical stress at four temperatures in nitrogen. By defining a 10% transconductance degradation as the failure criterion, we found an activation energy of 1.8 eV and a projected lifetime of 5/spl times/10/sup 6/ hrs at 125/spl deg/ ambient temperature. The degradation was found to be much faster in air than in nitrogen. High temperature storage tests showed that our devices are not sensitive to hydrogen.